mbr30hxxct, mbrf30hxxct, mbrb30hxxct www.vishay.com vishay general semiconductor revision: 13-aug-13 1 document number: 88866 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common cathode schottky rectifier high barrier technology for improv ed high temperat ure performance features ? power pack ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-st d-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab and ito-220ab package) ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc/dc converters, or polarity protection application. mechanical data case: to-220ab, ito-220ab, to-263ab molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade base p/nhe3 - rohs-compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 35 v, 45 v, 50 v, 60 v i fsm 150 a v f 0.56 v, 0.59 v i r 80 a, 60 a t j max. 175 c package to-220ab, ito-220ab, to-263ab diode variations dual common cathode pin 2 pin 1 pin 3 case pin 2 pin 1 pin 3 to-220ab mbr30hxxct ito-220ab mbrb30hxxct pin 1 pin 2 k heatsink 1 2 3 1 2 k mbrf30hxxct to-263ab 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr30h35ct mbr30h45ct mbr30h50ct MBR30H60CT unit maximum repetitive pe ak reverse voltage v rrm 35 45 50 60 v working peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v maximum average forward rectified current (fig. 1) total device i f(av) 30 a per diode 15 peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 150 a peak repetitive reverse surge current per diode ? at t p = 2 s, 1 khz i rrm 1.0 0.5 a peak non-repetitive reverse energy ? (8/20 s waveform) e rsm 25 20 mj
mbr30hxxct, mbrf30hxxct, mbrb30hxxct www.vishay.com vishay general semiconductor revision: 13-aug-13 2 document number: 88866 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) aec-q101 qualified non-repetitive avalanche energy per diode ? at 25 c, i as = 4 a, l = 10 mh e as 80 mj electrostatic di scharge capacitor voltage human body model: c = 100 pf, r = 1.5 k ? v c 25 kv voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c isolation voltage (ito-220ab only) ? from terminal to heatsink t = 1 min v ac 1500 v electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol mbr30h35ct mbr30h45ct mbr30h50ct MBR30H60CT unit maximum instantaneous forward voltage per diode (1) i f = 15 a t c = 25 c v f -0.62-0.68 v i f = 15 a t c = 125 c 0.49 0.56 0.55 0.59 i f = 30 a t c = 25 c - 0.73 - 0.83 i f = 30 a t c = 125 c 0.62 0.67 0.68 0.71 maximum reverse current per diode at working peak reverse voltage (2) t j = 25 c i r - 80 - 60 a t j = 125 c 5.0 15 4.0 15 ma maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr30h35ct mbr30h45ct mbr30h50ct MBR30H60CT unit thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbr mbrf mbrb unit typical thermal resistance junction to case per diode r ? jc 1.5 4.5 1.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab mbr30h45ct-e3/45 1.85 45 50/tube tube ito-220ab mbrf30h45ct-e3/45 1.99 45 50/tube tube to-263ab mbrb30h45ct-e3/45 1.35 45 50/tube tube to-263ab mbrb30h45ct-e3/81 1.35 81 800/teel tape and reel to-220ab mbr30h45cthe3/45 (1) 1.85 45 50/tube tube ito-220ab mbrf30h45cthe3/45 (1) 1.99 45 50/tube tube to-263ab mbrb30h45cthe3/45 (1) 1.35 45 50/tube tube to-263ab mbrb30h45cthe3/81 (1) 1.35 81 800/teel tape and reel
mbr30hxxct, mbrf30hxxct, mbrb30hxxct www.vishay.com vishay general semiconductor revision: 13-aug-13 3 document number: 88866 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward derating curve fig. 2 - maximum non-repe titive peak forward surge current per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode 0 10 20 30 40 50 25 0 75 100 125 150 175 mbrf mbr, mbrb average forward current (a) case temperature (c) 1 100 0 25 50 75 100 125 150 10 n umber of cycles at 60 hz peak forward surge current (a) t j = t j max. 8.3 ms single half sine-wave 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 10 100 instantaneous forward voltage (v) mbr30h35ct, mbr30h45ct mbr30h50ct, MBR30H60CT t j = 150 c t j = 25 c t j = 125 c instantaneous forward current (a) 60 40 20 0 100 80 0.0001 0.001 0.1 0.01 1 10 100 mbr30h35ct, mbr30h45ct mbr30h50ct, MBR30H60CT percent of rated peak reverse voltage (%) instantaneous reverse leakage current (ma) t j = 150 c t j = 125 c t j = 25 c 0.1 1 100 10 1000 100 10 000 reverse voltage (v) junction capacitance (pf) mbr30h35ct - mbr30h45ct mbr30h50ct - MBR30H60CT t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.01 0.1 0.1 1 1 10 10 t - pulse duration (s) transient thermal impedance (c/w)
mbr30hxxct, mbrf30hxxct, mbrb30hxxct www.vishay.com vishay general semiconductor revision: 13-aug-13 4 document number: 88866 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) ? to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38) to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n . 0.15 (3.81) mi n . 0.33 (8.38) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) mi n .
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